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GE DS200IIBDG1A DS200IIBDG1ACA IGBT Module Board

Brand: GE
Model Number: DS200IIBDG1A DS200IIBDG1ACA
Type:IGBT Module Board
Product Origin: United States
Payment: T/T, Western Union, Credit Card
Price: USD 99
Dimensions:  17 cm x 14.5 cm x 6.5 cm
Weight: 0.45 kg
Warranty: 12 months

1000 in stock

SKU DS200IIBDG1A DS200IIBDG1ACA Category Tags , Brand:

Technical Specifications

ParameterValue
BrandGE
ModelDS200IIBDG1A DS200IIBDG1ACA
CategoryIGBT Module Board
Weight3.45 lbs (1.56 kg)
Dimensions10.8 x 7.4 x 3.1 inches
PCB Layers4-layer heavy copper
Component Count156 discrete components
IGBT ConfigurationDual, half-bridge
Voltage Rating1200V
Current Rating300A continuous
Peak Current600A for 1 ms
Saturation Voltage2.1V typical at 300A
Switching FrequencyUp to 10 kHz
Built-in DiodeAnti-parallel, 300A rating
Temperature SensorNTC thermistor built-in
Gate Resistance4.7Ω external configurable
Isolation2500V RMS case to terminals
Energy Storage8 x 1000µF, 6 x 470µF
Operating Temperature-20°C to 85°C

Physical Construction and Component Layout

This DS200IIBDG1A DS200IIBDG1ACA IGBT module board measures 10.8 inches in length. Its width reaches 7.4 inches with a height of 3.1 inches. The total weight comes to approximately 3.45 pounds. Manufacturers placed 156 discrete components on this heavy copper PCB. These components include IGBT dies, freewheeling diodes, gate resistors, and thermistors. Both DS200IIBDG1A and DS200IIBDG1ACA share the same power module configuration.

Power Ratings and Switching Performance

DS200IIBDG1A DS200IIBDG1ACA features a dual half-bridge IGBT configuration. Each IGBT handles 1200V and 300A continuously. Peak current capability reaches 600A for 1 millisecond. Typical saturation voltage measures 2.1V at 300A conduction. Built-in anti-parallel diodes match the 300A current rating. These diodes handle regenerative current without external components. Switching frequency supports up to 10 kHz for most drive applications.

Protection and Temperature Monitoring

DS200IIBDG1A DS200IIBDG1ACA includes an NTC thermistor for temperature sensing. This thermistor mounts directly on the IGBT substrate for accuracy. Users can configure external gate resistance for switching optimization. Default gate resistance measures 4.7Ω for balanced performance. Isolation withstands 2500V RMS between case and power terminals. Consequently, this module safely connects to high-voltage DC buses.

Energy Storage and Application Use

DS200IIBDG1A DS200IIBDG1ACA integrates eight 1000µF capacitors for bus storage. Six additional 470µF capacitors filter high-frequency switching transients. You will find this board in GE industrial motor drives and inverters. It serves as the main power switching stage for AC drives. The module operates reliably from -20°C to 85°C ambient. For example, it powers pumps, fans, or conveyor systems. Therefore, this IGBT module board delivers robust power switching for demanding industrial applications.

Details

Weight0.45 kg
Dimensions170 × 145 × 65 mm

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